![Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions | Nature Energy Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions | Nature Energy](https://media.springernature.com/m685/springer-static/image/art%3A10.1038%2Fnenergy.2017.144/MediaObjects/41560_2017_Article_BFnenergy2017144_Fig1_HTML.jpg)
Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions | Nature Energy
![Sandia's National Security Photonics Center (NSPC) – Microsystems Engineering, Science and Applications (MESA) Sandia's National Security Photonics Center (NSPC) – Microsystems Engineering, Science and Applications (MESA)](https://www.sandia.gov/app/uploads/sites/145/2021/10/3-17.jpg)
Sandia's National Security Photonics Center (NSPC) – Microsystems Engineering, Science and Applications (MESA)
![III/V-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template | Light: Science & Applications III/V-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template | Light: Science & Applications](https://media.springernature.com/m685/springer-static/image/art%3A10.1038%2Fs41377-019-0202-6/MediaObjects/41377_2019_202_Fig1_HTML.png)
III/V-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template | Light: Science & Applications
![Initial letter L and V, , , VL, overlapping interlock logo, monogram line art style, si, er gold on black background Stock-vektor | Adobe Stock Initial letter L and V, , , VL, overlapping interlock logo, monogram line art style, si, er gold on black background Stock-vektor | Adobe Stock](https://as1.ftcdn.net/v2/jpg/02/18/88/20/1000_F_218882032_4GxL55Dst6zmCnvaCZ375RT3guW5Rj3M.jpg)
Initial letter L and V, , , VL, overlapping interlock logo, monogram line art style, si, er gold on black background Stock-vektor | Adobe Stock
![Flexible complementary circuits operating at sub-0.5 V via hybrid organic–inorganic electrolyte-gated transistors | PNAS Flexible complementary circuits operating at sub-0.5 V via hybrid organic–inorganic electrolyte-gated transistors | PNAS](https://www.pnas.org/cms/10.1073/pnas.2111790118/asset/2041e755-3f6c-4108-a8a8-488211e0369d/assets/images/large/pnas.2111790118fig01.jpg)
Flexible complementary circuits operating at sub-0.5 V via hybrid organic–inorganic electrolyte-gated transistors | PNAS
![Heterogeneous and Monolithic 3D Integration of III–V-Based Radio Frequency Devices on Si CMOS Circuits | ACS Nano Heterogeneous and Monolithic 3D Integration of III–V-Based Radio Frequency Devices on Si CMOS Circuits | ACS Nano](https://pubs.acs.org/cms/10.1021/acsnano.2c00334/asset/images/large/nn2c00334_0001.jpeg)